Dahlia Klein
Paper abstract:
Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements, superconducting field-effect transistors (FETs) and gate-tunable qubits. Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered.Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers.